{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

hwk7sol

# hwk7sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

This preview shows pages 1–2. Sign up to view the full content.

ECE 3080A: Homework #7, Solutions November 26, 2007 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #7 SOLUTIONS 1. MOSFET DC Characteristics: (20 points) An ideal p-channel MOSFET has the following parameters: W = 15 μm, μ p = 300 cm 2 /V-s, L = 1.5 μm, x o = 350 Å, V T = -0.8 V. (a) Plot I D versus V SD for V V SD 5 0 ! ! and for V SG = 0, 1, 2, 3, 4 and 5V. Indicate on each curve V SD (sat). Note that V SD = - V DS , V SG = - V GS (b) Plot I D versus V SG for V SD = 0.1V, and for V V SG 5 0 ! ! . 2. MOSFET: I-V Characteristic: (20 points) Consider an ideal n-channel MOSFET with parameters L = 1.25 μm, μ n = 650 cm 2 /Vs, C O = 6.9 x 10 -8 F/cm 2 , and V T = 0.65 V. Design the channel width Z such that I D,sat = 4 mA for V G = 5 V. 3. MOSFET AC Characteristic: (20 points)

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 6

hwk7sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online