hwk4sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 3080A: Homework #4, Solutions Oct. 17, 2007 Page 1 of 4 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2007, Homework #4 Solutions 1. PN Junction: Reverse-Bias Junction Capacity (20 points) The reverse-bias junction capacity of a silicon step junction has been measured for two applied voltages. The result is 43.4 nF/cm 2 at V A = -3 V and 27.6 nF/cm 2 at V A = -10 V (a) Calculate the built-in potential V bi . (b) Calculate the substrate doping N B . Given are the elementary charge q = 1.6·10 -19 C and the dielectric constant for silicon ε = K S ε 0 = 11.9 · 8.85·10 -14 F/cm. Solution: C-V Relationship from Pierret, page 309: 1 C j / A ( ) 2 = 2 qN B K S ! 0 V bi " V A ( ) i.e. plotting 1/(C j /A) 2 vs. V A gives a straight line with a slope proportional to N B -1 and an intersection with the V-axis at V A =V bi . Given are 2 points on this straight line:
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 02/17/2010 for the course ECE 3025 taught by Professor Citrin during the Spring '08 term at Georgia Institute of Technology.

Page1 / 4

hwk4sol - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online