ece 3040 Homework4 - Homework 4 A silicon p-n diode...

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Homework 4 A silicon p-n diode maintained at 300K has a doping of N a =3x10 18 cm -3 and N d =1.0x10 16 cm -3 and mobilities in the two regions of µ n =1000 cm 2 /V-Sec, µ p =200 cm 2 /V-Sec, minority carrier lifetimes in the two regions of τ n =10 µ S τ p =1.2 µ S. 1) What is the built in voltage? 2) What is the depletion width (total, W) and width on each side of the junction (x n and x p 3) Why is the value of x )? p different from x n 4) What is the leakage current density, Jo (not Io)? (i.e. why is the depletion region asymmetric)? 5) Write out the J-V equation of the diode explaining which part is due to diffusion current and which part is due to drift current. 6) What is the capacitance per unit area and the small signal diode resistance at 0 volts? (Assuming the diode area is 2.0e-5 cm 2 7) What is the capacitance per unit area and the small signal diode resistance at -3 volts (i.e. reverse bias)?
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This note was uploaded on 02/17/2010 for the course ECE 3040 taught by Professor Hamblen during the Spring '07 term at Georgia Institute of Technology.

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ece 3040 Homework4 - Homework 4 A silicon p-n diode...

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