{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

ece 3040 Homework4

# ece 3040 Homework4 - Homework 4 A silicon p-n diode...

This preview shows pages 1–2. Sign up to view the full content.

Homework 4 A silicon p-n diode maintained at 300K has a doping of N a =3x10 18 cm -3 and N d =1.0x10 16 cm -3 and mobilities in the two regions of µ n =1000 cm 2 /V-Sec, µ p =200 cm 2 /V-Sec, minority carrier lifetimes in the two regions of τ n =10 µ S τ p =1.2 µ S. 1) What is the built in voltage? 2) What is the depletion width (total, W) and width on each side of the junction (x n and x p 3) Why is the value of x )? p different from x n 4) What is the leakage current density, Jo (not Io)? (i.e. why is the depletion region asymmetric)? 5) Write out the J-V equation of the diode explaining which part is due to diffusion current and which part is due to drift current. 6) What is the capacitance per unit area and the small signal diode resistance at 0 volts? (Assuming the diode area is 2.0e-5 cm 2 7) What is the capacitance per unit area and the small signal diode resistance at -3 volts (i.e. reverse bias)? when solving problems 6-8) 8) What is the capacitance per unit area and the small signal diode resistance at +0.5 volts (i.e. forward bias)?

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 2

ece 3040 Homework4 - Homework 4 A silicon p-n diode...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online