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ECE 3040
Dr. Alan Doolittle
Microelectronic Circuits
Homework #4
NOTE: Some reference materials including tables, figures etc.
.. handed out in class or in your text
may be needed to solve these problems.
1.) Pierret 5.3
2.) Pierret 5.5 (this requires you to answer part of 5.4 as well so that you can compare your
results).
3.)
A silicon step pn junction is doped with 10
18
cm
3
acceptors on one side and 10
14
cm
3
donors.
The intrinsic concentration is 10
10
cm
3
.
The hole minority carrier lifetime is 1
μ
S while
the electron minority carrier lifetime is 10
μ
S.
The minority carrier electron mobility is 1000
cm
2
/VSec while the minority carrier hole mobility is 250 cm
2
/VSec.
a.)
Determine the saturation current for a device that has a crosssectional area of
0.00456 cm
2
.
b.)
If +0.35 V is applied to the ptype side (relative to the ntype side), is the diode
reverse biased, or forward biased?
c.)
For the conditions in part (b) what is the pn product at the depletion region edge,
assuming no recombinationgeneration inside the depletion region?
d.)
If +0.35 V is applied to the ntype side (relative to the ptype side), is the diode
reverse biased, or forward biased?
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This note was uploaded on 02/17/2010 for the course ECE 3040 taught by Professor Hamblen during the Spring '07 term at Georgia Institute of Technology.
 Spring '07
 HAMBLEN

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