Homework4 - ECE 3040 Dr. Alan Doolittle Microelectronic...

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ECE 3040 Dr. Alan Doolittle Microelectronic Circuits Homework #4 NOTE: Some reference materials including tables, figures etc. .. handed out in class or in your text may be needed to solve these problems. 1.) Pierret 5.3 2.) Pierret 5.5 (this requires you to answer part of 5.4 as well so that you can compare your results). 3.) A silicon step p-n junction is doped with 10 18 cm -3 acceptors on one side and 10 14 cm -3 donors. The intrinsic concentration is 10 10 cm -3 . The hole minority carrier lifetime is 1 μ S while the electron minority carrier lifetime is 10 μ S. The minority carrier electron mobility is 1000 cm 2 /VSec while the minority carrier hole mobility is 250 cm 2 /VSec. a.) Determine the saturation current for a device that has a cross-sectional area of 0.00456 cm -2 . b.) If +0.35 V is applied to the p-type side (relative to the n-type side), is the diode reverse biased, or forward biased? c.) For the conditions in part (b) what is the pn product at the depletion region edge, assuming no recombination-generation inside the depletion region? d.) If +0.35 V is applied to the n-type side (relative to the p-type side), is the diode reverse biased, or forward biased?
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This note was uploaded on 02/17/2010 for the course ECE 3040 taught by Professor Hamblen during the Spring '07 term at Georgia Institute of Technology.

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Homework4 - ECE 3040 Dr. Alan Doolittle Microelectronic...

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