# ECE440_hw8v1 - ECE 440 Homework VIII Due Monday Fall 2009...

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Homework VIII Fall 2009 Due: Monday, November 02, 2009 Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. Problem # 1: A semi-infinite p-type bar is illuminated with light which generates G L electron-hole pairs per cm 3 -sec uniformly throughout the volume of the semiconductor. Simultaneously, carriers are extracted at x = 0 making Δn p = 0 at x = 0. Assuming a steady state condition has been established and Δn p << p0 for all x, determine Δn p (x) (the excess electron concentration). (Hint: make use of the diffusion equation 4:34) Problem # 2: As pictured above, the x > 0 portion of an infinite semiconductor is illuminated with light. The light generates G op = 10 15 electron-hole pairs/cm3-sec uniformly throughout the x > 0 region of the bar. G op = 0 for x < 0, steady state conditions prevail, the semiconductor is silicon, the entire bar is uniformly doped with N D = 10 18 /cm 3 , τ P = 10 -6 sec, and T = 300 K. (a)

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ECE440_hw8v1 - ECE 440 Homework VIII Due Monday Fall 2009...

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