hw4_v1 - ECE 440 Homework IV Due Friday Fall 2009 Print...

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ECE 440 Homework IV Fall 2009 Due: Friday, September 25, 2009 Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. A Si bar is 0.2 cm long and 200 µm 2 in cross-sectional area. Find the current at 300 K with 10 V applied to (a) the Si bar is doped with 1x10 17 /cm 3 gallium and (b) the Si bar is doped with 1x10 17 /cm 3 gallium and 2x10 17 /cm 3 arsenic. Refer to Fig. 3-23 or the mobility chart posted online.) (c) The silicon sample is grounded at x=0 and biased at +10 V at x=0.2 cm. Draw the corresponding energy band diagram for case (a). 2. How long does it take for an average electron to drift 0.2 mm donors under an elec- tric field of 100 V/cm for: (a) pure Si and (b) Si doped with 6x10 16 /cm 3 donors at an electric field of 100 V/cm? Repeat if the electric field is change to 10 5 V/cm. Assume that the electron effective mass m n *=0.26 m o . 3. Consider a silicon sample at 300 K. Assume that the electron concentration varies
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This note was uploaded on 02/21/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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hw4_v1 - ECE 440 Homework IV Due Friday Fall 2009 Print...

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