Hw5_1 (1) - ECE 440 Homework V Due: Friday, October 09,...

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ECE 440 Homework V Fall 2009 Due: Friday, October 09, 2009 Please write your name and net ID on your homework. Show all work leading to your answer. 1. The acceptor profile of a silicon sample is shown below. Assume that the majority carrier mobility can be obtained from Fig. 3-23 (or the enlarged graph posted in the 440 website), and the sample is at thermal equilibrium at 300 K. (a) Determine the diffusion coefficients for majority carriers at points A, B and C, respectively. (b) Find the majority carrier diffusion current densities along the cross sections at points A, B and C, respectively. Indicate not only the magnitude but also the direction. (c) Find an expression for the built-in electric field E (x) at equilibrium over the range from x= 1µm to x=3 µm. (d) Sketch a band diagram such as in Fig. 4-15 over the range from x= 1µm to x=3 µm and indicate the direction of E . 2. A Schottky barrier is formed between a metal having a work function of 4.3 eV and p-type Si (electron affinity = 4 eV). The acceptor doping in the Si is 8x10
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This note was uploaded on 02/21/2010 for the course ECE 440 taught by Professor Staff during the Spring '08 term at University of Illinois, Urbana Champaign.

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Hw5_1 (1) - ECE 440 Homework V Due: Friday, October 09,...

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