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EEE 436/591Fundamentals of Solid State Devices
Spring 2010
Time and Place
:
3:004:15 pm
TTh, PEBE 201
Instructor
:
Prof. Brian J. Skromme
Office
:
ERC 155
Ph. (480) 9658592
FAX
(480) 9658118
email:
skromme@asu.edu
Office
hours
:
3:404:30 pm MW, 10:4011:30 pm TTh.
Other times by appointment
only; please try to come during the assigned hours unless you have a conflict.
E
mail questions accepted any time (may not be answered immediately); questions by
phone accepted during office hours only.
Final Exam
:
12:102:00 pm, Thursday, May 6
th
, in the usual classroom.
HW Solutions:
Will be available shortly after due date on the BlackBoard web site.
Catalog
Description
:
Semiconductor fundamentals,
pn
junctions, metalsemiconductor
contacts, metaloxidesemiconductor capacitors and fieldeffect transistors, bipolar
junction transistors.
Prerequisite:
EEE 352 (Properties of Electronic Materials).
Prerequisites by Topic:
It is assumed that you already have a thorough understanding of the concepts
and equations in Chs. 13 of the text, Semiconductor Device Fundamentals
, with the
possible exceptions of FermiDirac integrals and quasiFermi levels.
(This material
should all have been covered in EEE 352; it is also equivalent to Vol. I of the Modular
Series on Solid State Devices.)
You should also be familiar with circuit applications of
diodes, bipolar and fieldeffect transistors, and have a basic understanding of
electrostatics, particularly Poisson’s equation, the integral and differential forms of
Gauss’s Law, electrostatic potentials, capacitance, dielectrics, and continuity conditions
across dielectric boundaries.
Required text:
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 Spring '10
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