ee3161 spring10 lecture note 6

Ee3161 spring10 lecture note 6

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Pierret Ch 5 (pp. 195-234) Lecture Note 6 P-N Junction: Electrostatics Overview Qualitative PN Junction Depletion approx. Poisson Equation Barrier Height Barrier E-field Biased PN Junction 1 Diode n Depletion region EE3161 Semiconductor Devices Sang-Hyun Oh p UNIVERSITY OF MINNESOTA PN Junction Devices MOS transistor Bipolar Junction Transistor (BJT) Silicon solar cell Blue GaN LED EE3161 Semiconductor Devices Sang-Hyun Oh Avalanche Photodiode 2 UNIVERSITY OF MINNESOTA Introduction: P-N Junction The vast majority of semiconductor devices are based on diodes: transistors, photodetectors, light-emitting diodes (LED) and lasers. The most important property of a pn-junction diode is its ability to rectify, i.e. to pass current strongly in one direction but not in the other. In its simplest form, the pn junction diode is made by joining two semiconducting materials, one p-doped and the other n-doped. EE3161 Semiconductor Devices Sang-Hyun Oh 3 UNIVERSITY OF MINNESOTA Metallurgical Junction Typical doping profile of a pn junction is shown. The dividing line between the p and n regions, known as the metallurgical junction, occurs where NA=ND (or net doping = 0). EE3161 Semi...
View Full Document

This note was uploaded on 02/24/2010 for the course EE 3161 taught by Professor Prof.sang-­hyunoh during the Spring '10 term at University of Minnesota Crookston.

Ask a homework question - tutors are online