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Unformatted text preview: Pierret Ch 5 (pp. 195-234) Lecture Note 6 P-N Junction: Electrostatics
Overview Qualitative PN Junction Depletion approx. Poisson Equation Barrier Height Barrier E-ﬁeld Biased PN Junction
1 Diode n Depletion region
EE3161 Semiconductor Devices Sang-Hyun Oh p UNIVERSITY OF MINNESOTA PN Junction Devices MOS transistor Bipolar Junction Transistor (BJT) Silicon solar cell Blue GaN LED
EE3161 Semiconductor Devices Sang-Hyun Oh Avalanche Photodiode 2 UNIVERSITY OF MINNESOTA Introduction: P-N Junction
The vast majority of semiconductor devices are based on diodes: transistors, photodetectors, light-emitting diodes (LED) and lasers. The most important property of a pn-junction diode is its ability to rectify, i.e. to pass current strongly in one direction but not in the other. In its simplest form, the pn junction diode is made by joining two semiconducting materials, one p-doped and the other n-doped. EE3161 Semiconductor Devices Sang-Hyun Oh 3 UNIVERSITY OF MINNESOTA Metallurgical Junction Typical doping proﬁle of a pn junction is shown. The dividing line between the p and n regions, known as the metallurgical junction, occurs where NA=ND (or net doping = 0).
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This note was uploaded on 02/24/2010 for the course EE 3161 taught by Professor Prof.sang-hyunoh during the Spring '10 term at University of Minnesota Crookston.
- Spring '10