EE_331Sp_2009_-_HW6S

EE_331Sp_2009_-_HW6S - EE 331 Devices and Circuits I...

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1 EE 331 Devices and Circuits I Spring 2009 Problem #6 Solution 4.10 a   0 1 V cutoff region, I D = 0 b   1V = 1V cutoff region, I D = 0 (c) V GS - V TN = 1 V , V DS = 0.1 V triode region I D K n ' W L V GS V TN V DS 2 V DS 250 A V 2 10 m 1 m 2 1 0.1 2 0.1     231 A (d) V GS - V TN = 2 V V DS = 0.1 V triode region I D K n ' W L V GS V TN V DS 2 V DS 250 A V 2 10 m 1 m 3 1 0.1 2 0.1     488 A e   K n K n ' W L 250 A V 2 10 m 1 m 2.50 mA V 2 4.15 a   R on 1 K n ' W L V GS V TN 1 100 x 10 6 100 1 5 0.65 23.0 b   R 1 100 x 10 6 100 1 3.3 0.50 35.7 4.20 a   For V GS 0, V GS V TN and I D
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This note was uploaded on 02/28/2010 for the course EE 331 taught by Professor Taicheng during the Spring '08 term at University of Washington.

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EE_331Sp_2009_-_HW6S - EE 331 Devices and Circuits I...

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