lab4 - Experiment-4 Experiment-4 Multi-Stage Amplifiers...

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Experiment-4 R. B. Darling EE-332 Laboratory Handbook Page E4.1 Experiment-4 Multi-Stage Amplifiers Introduction The objectives of this experiment are to examine the characteristics of several multi-stage amplifier configurations. Several of these will be breadboarded and measured for voltage gain, frequency response and signal swing. In addition to the performance measurements, you should also pay attention to how the biasing of each amplifier stage is achieved, how the signal is coupled from stage to stage, and what design strategy has been adopted to desensitize the amplifier performance to variations in the transistor parameters. For each amplifier in this experiment, try to answer the question: “What has been achieved by connecting the transistors in this configuration?” To begin to answer this question, first identify whether a particular transistor is providing bias stabilization for other transistors, or is a gain stage in the signal path. Some transistors may simultaneously function in both roles. Then try to determine what components set the voltage gain of the amplifier. Track the path of the signal through the different stages of the amplifier and try to understand how much voltage gain is produced across each stage, how big the signal is at each node along the path, and what limits the signal swing at each node. Draw a schematic of the amplifier in your lab notebook and mark it up extensively to show the DC bias voltage at each node, the path that the signal takes from input to output, and any thing else that is of interest to you. The amplifier circuits described in this experiment are not as simple as those previously used in this lab. While all of the component values are fairly close to the values needed to make the circuits work, normal variations in transistor parameters will require that each amplifier circuit be “tuned-up” slightly to center the signal swings or trim out the gain. This is left for you to do without any explicit instructions and is intended to force you to understand how the circuits work and to gain skill in electronic troubleshooting. Similarly, the procedures will only ask you to measure certain performance parameters without giving explicit instructions. At this point, you should be comfortable making all of these measurements. Refer back to experiments 2 and 3 if you need to refresh your memory on making gain and frequency response measurements. Comment Some of the procedures in this experiment will utilize the CA3046 npn BJT array. The CA3046 is an RCA part number, and it is the same as the National Semiconductor part number LM3046. This integrated
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Experiment-4 R. B. Darling EE-332 Laboratory Handbook Page E4.2 circuit comprises five npn BJTs which are fabricated on the same piece of silicon, and is a first approximation to the behavior of BJTs that one would find in a bipolar integrated circuit. The first two BJTs are tied together with a common emitter (pin 3), and the last BJT has its emitter tied to the substrate (pin 13), as shown in Fig. E4.0 below.
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lab4 - Experiment-4 Experiment-4 Multi-Stage Amplifiers...

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