supplementary1 - Chapter1 (Sections1.1and1.2)...

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Adaptive Integrated Microsystems Chapter 1 (Sections 1.1 and 1.2) Supplementary Notes ECE 412 Introduction to mixed-signal circuits (Fall 2007) Class website: http://www.egr.msu.edu/classes/ece412/shantanu
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Adaptive Integrated Microsystems Review - Four terminals (for nMOS and pMOS transistors) - Gate (G), drain (D), source (S) and bulk (B). - nMOS bulk always connected to lowest potential (gnd). - pMOS bulk always connected to highest potential (Vdd). nMOS transistor pMOS transistor
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Adaptive Integrated Microsystems Review - Whenever bulk terminal is not shown the following will be assumed: - nMOS bulk is connected to gnd. - pMOS bulk is connected to Vdd. ] 2 1 ) [( 2 ds ds th gs L W ox n ds V V V V C I - - = μ Width Length
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Source Gate Drain th V s V d V g V 0 0 = - = s g gs V V V 0 = - = s d ds V V V L Barriers
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Gate Channel is formed Source Drain 0 th gs th s g V V V V V = + =
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Gate Channel width increases Source Drain 0 th gs V V th gs eff V V V - = Effective gate-to-source voltage:
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Gate Current flow Source Drain 0 0 ds V
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Gate Pinch-off Source Drain 0 th gs ds th gd V V V V V - = = Pinched channel at drain eff dsat V V Important !
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor Gate Drain voltage does not affect the flow (active/saturation region) Source Drain 0 th gd V V < dsat ds th gs ds V V V V V -
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Adaptive Integrated Microsystems Conceptual operation of an nMOS transistor ] 2 1 ) [( 2 ds ds th gs L W ox n ds V V V V C I - - = μ Drain Source Triode region ds th gs L W ox n ds th gs ds V V V C I V V V ) ( - = - << μ Pinch-off condition Drain Source 2 2 ) ( th gs L W ox n ds th gs ds V V C I V V V - = - = Saturation condition Source Drain 2 2 ) ( th gs L W ox n ds th gs ds V V C I V V V - = -
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Adaptive Integrated Microsystems Active Region/Saturation Region Active Region
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Adaptive Integrated Microsystems
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This note was uploaded on 03/01/2010 for the course ECE 412 taught by Professor - during the Fall '08 term at Michigan State University.

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supplementary1 - Chapter1 (Sections1.1and1.2)...

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