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Homework 09 - EEE 352-Spring 2008 Homework 9 7.1 Calculate Vbi in a silicon pn junction at T = 300 K for(a Nd = 1015 cm-3 and Na =(i 1015(ii

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EEE 352—Spring 2008 Homework 9 7.1 Calculate V bi in a silicon pn junction at T = 300 K for (a) N d = 10 15 cm -3 and N a = (i) 10 15 , (ii) 10 16 , (iii) 10 17 , and (iv) 10 18 cm -3 . (b) Repeat for N d = 10 18 cm -3 . To begin, the built-in potential is given by(7.10) to be = 2 ln i d a B bi n N N e T k V . Using the value of n i from Table B.4, we find the following values: N a = 10 15 10 16 10 17 10 18 (a) N d = 10 15 cm -3 0.575 0.634 0.694 0.754 (b) N d = 10 18 cm -3 0.754 0.813 0.873 0.932 7.5 An abrupt pn junction at zero bias has dopant concentrations of N a = 10 17 cm -3 and N d = 5 × 10 15 cm -3 . T = 300 K. (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level. (b) Sketch the equilibrium band diagram for the junction and determine V bi from the diagram and the results of part (a). (c) Calculate V bi using Eq. (7.10), and compare the results to part (b). (d) determine x
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This homework help was uploaded on 04/03/2008 for the course EEE 352 taught by Professor Ferry during the Spring '08 term at ASU.

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Homework 09 - EEE 352-Spring 2008 Homework 9 7.1 Calculate Vbi in a silicon pn junction at T = 300 K for(a Nd = 1015 cm-3 and Na =(i 1015(ii

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