Homework%2010

Homework%2010 - EEE 352-Fall 2008.30 An ideal n-channel...

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EEE 352—Fall 2008 Homework 10 11.30 An ideal n-channel MOSFET has the following parameters: W = 30 µ m, n = 450 cm 2 /Vs, L = 2 m, t ox = 35 nm, V T = 0.8 V. (a) Plot I D versus V DS for 0 V DS 5 V and for V GS = 0, 1, 2, 3, 4, 5 V. Indicate on each curve the V DS,sat point. (b) Plot the square root of I D versus V GS for 0 V GS 5 V. (c) Plot I D for V DS = 0.1 V and for 0 V GS 5 V. The basic equation for the ideal MOSFET is D D T G ox n D V V V V L C W I = 2 . The coefficient in front is 2 6 14 4 3 / 66 . 0 10 5 . 3 10 854 . 8 9 . 3 10 2 450 10 3 V mA L C W ox n = × × × × = (a) 0 1 2 3 4 5 6 012345 Drain Current (mA) Drain Voltage (V) V G = 5 V V G = 1 V V G = 2 V V G = 3 V V G = 4 V X X X X X (b) The saturation current is given by () 2 2 T G ox n D V V L C W I = Then the plot is
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0 0.5 1 1.5 2 2.5 0123456 (I D,sat ) 1/2 (mA) Gate Voltage (V) (c) 0 0.05 0.1 0.15 0.2 0.25 0.3 Drain Current (mA) Gate Voltage (V) V D = 0.1 V
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11.32 Consider an n-channel MOSFET with the same parameters as given in Prob.
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Homework%2010 - EEE 352-Fall 2008.30 An ideal n-channel...

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