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Homework%2008 - EEE 352-Spring 2008 Homework 8 5.39 A...

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EEE 352—Spring 2008 Homework 8 5.39 A silicon sample is doped with 10 16 boron atoms per cm 3 . The Hall sample has the same geometrical dimensions given in example 5.7. The current is I x = 1 mA with B z = 350 gauss = 3.5 × 10 -2 tesla. Determine (a) the Hall volage and (b) the Hall field. From example 5.7, we find that L = 0.1 cm, W = 0.01 cm, and d = 0.001 cm. Hence, the current density is 2 3 2 3 / 100 10 10 10 cm A Wd I J x x = = = . From the doping, we can determine the Hall constant as . / 625 10 6 . 1 10 1 1 3 19 16 coul cm pe R H = × = = (b) The Hall field is now given as cm V m V B J R E z x H y / 219 . 0 / 88 . 21 10 5 . 3 10 10 25 . 6 2 6 4 = = × × = = (a) The Hall voltage is now V WE V y H 3 10 19 . 2 × = = 5.41 A silicon Hall device at T = 300 K has the following geometry: d = 10 -3 cm, W = 10 -2 cm, and L = 10 -1 cm. The following parameters are measured: I x = 0.75 mA, V x = 15 V, V H = +5.8 mV, and B z = 10 -1 tesla. Determine (a) the conductivity type, (b) the majority carrier concentration, and (c) the majority carrier mobility.
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Homework%2008 - EEE 352-Spring 2008 Homework 8 5.39 A...

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