EEE 352—Spring 2008
Homework 8
5.39
A silicon sample is doped with 10
16
boron atoms per cm
3
.
The Hall sample has
the same geometrical dimensions given in example 5.7.
The current is I
x
= 1 mA
with B
z
= 350 gauss = 3.5
×
10
2
tesla.
Determine (a) the Hall volage and (b) the
Hall field.
From example 5.7, we find that
L
= 0.1 cm,
W
= 0.01 cm, and
d
= 0.001 cm.
Hence, the current density is
2
3
2
3
/
100
10
10
10
cm
A
Wd
I
J
x
x
=
⋅
=
=
−
−
−
.
From the doping, we can determine the Hall constant as
.
/
625
10
6
.
1
10
1
1
3
19
16
coul
cm
pe
R
H
=
×
⋅
=
=
−
(b) The Hall field is now given as
cm
V
m
V
B
J
R
E
z
x
H
y
/
219
.
0
/
88
.
21
10
5
.
3
10
10
25
.
6
2
6
4
=
=
×
⋅
⋅
×
=
=
−
−
(a) The Hall voltage is now
V
WE
V
y
H
3
10
19
.
2
−
×
=
=
5.41
A silicon Hall device at T = 300 K has the following geometry: d = 10
3
cm, W =
10
2
cm, and L = 10
1
cm.
The following parameters are measured: I
x
= 0.75 mA,
V
x
= 15 V, V
H
= +5.8 mV, and B
z
= 10
1
tesla.
Determine (a) the conductivity
type, (b) the majority carrier concentration, and (c) the majority carrier mobility.
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 Spring '08
 Ferry
 Hall field

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