Test%202%20Solutions

Test%202%20Solutions - EEE 352 – Fall 2008 Test 2...

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Unformatted text preview: EEE 352 – Fall 2008 Test 2 Solutions April 2, 2008 1. A Si p-n junction is measured to have a built-in potential of 0.856 V and N D = 1 × 10 17 cm-3 . What are N A and the junction width? What is the capacitance per unit area? From the junction built-in voltage equation, we can find the product N D N A as: 6 34 20 2 2 10 . 5 0259 . 856 . exp 10 25 . 2 exp ln − × = ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ × = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ = cm T k eV n N N n N N T k eV B bi i A D i A D B bi From this, we find that 3 17 17 34 10 5 10 1 10 5 − × = × × = cm N A . The junction width as m N N N N e V W A D A D bi µ ε 115 . 10 5 10 6 10 6 . 1 856 . 10 854 . 8 7 . 11 2 2 46 23 19 12 = × × × ⋅ × ⋅ ⋅ = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ + = − − The capacitance is then 2 8 7 12 / 10 9 10 15 . 1 10 854 . 8 7 . 11 cm F C − − − × = × × ⋅ = . 2. An n-channel MOSFET has an oxide thickness of 1.5 nm, oxide dielectric constant of 3.9, W/L g = 80, µ...
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Test%202%20Solutions - EEE 352 – Fall 2008 Test 2...

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