irf1503spbf - PD - 95432 Typical Applications l l l...

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HEXFET ® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET ® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G V DSS = 30V R DS(on) = 3.3m I D = 75A Description 06/21/04 www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Benefits Typical Applications l 14V Automotive Electrical Systems l 14V Electronic Power Steering l Lead-Free IRF1503SPbF IRF1503LPbF D 2 Pak IRF1503S TO-262 IRF1503L Parameter Typ. Max. Units R θ JC Junction-to-Case ––– 0.75 R θ CS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R θ JA Junction-to-Ambient ––– 62 Thermal Resistance Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon limited) 190 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V (See Fig.9) 130 A I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package limited) 75 I DM Pulsed Drain Current ± 960 P D @T C = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy ² 510 mJ E AS (tested) Single Pulse Avalanche Energy Tested Value ³ 980 I AR Avalanche Current ± See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy ´ T J Operating Junction and -55 to + 175 °C T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings PD - 95432
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IRF1503S/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, I D = 250μA V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– 2.6 3.3 m V GS = 10V, I D = 140A ± V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = 10V, I D = 250μA g fs Forward Transconductance 75 ––– ––– S V DS = 25V, I D = 140A ––– ––– 20 μA V DS = 30V, V GS = 0V ––– ––– 250 V DS = 24V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA V GS = -20V Q g Total Gate Charge ––– 130 200 I D = 140A Q gs Gate-to-Source Charge ––– 36 54 nC V DS = 24V Q gd Gate-to-Drain ("Miller") Charge ––– 41 62 V GS = 10V ± t d(on) Turn-On Delay Time ––– 17 ––– V DD = 15V t r Rise Time ––– 130 ––– I D = 140A t d(off) Turn-Off Delay Time ––– 59 ––– R G = 2.5 t f Fall Time ––– 48 ––– V GS = 10V ± Between lead, ––– ––– 6mm (0.25in.)
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This note was uploaded on 03/06/2010 for the course SDS sdsd taught by Professor Sds during the Spring '10 term at Aarhus Universitet.

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irf1503spbf - PD - 95432 Typical Applications l l l...

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