628048_6228 - SEMICONDUCTOR STRUCTURES and DEVICES 1...

Info iconThis preview shows pages 1–15. Sign up to view the full content.

View Full Document Right Arrow Icon
SEMICONDUCTOR STRUCTURES and DEVICES Christian BRYLINSKI - January 2010 Laboratoire des Multimatériaux et Interfaces UMR 5615 1 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Basic Semiconductor Structures Related « Diod and « Triod Devices Electrostatic Modelling, Metal / Semiconductor Structures, / N Junctions, P / N Junctions, eterostructures 2 Heterostructures, M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 2
SEMICONDUCTORS STRUCTURES and DEVICES Part 1 : lectrostatic Modelling Electrostatic Modelling Metal / Semiconductor Structures Christian BRYLINSKI -January 2010 Laboratoire des Multimatériaux et Interfaces,UMR 5615 3 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
emiconductor Semiconductor tructures Modelling Structures Modelling d electrostatics 1d electrostatics 4 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 4
d Electrostatics 1d Electrostatics is simple and can be made tuitive It provides the intuitive. It provides the topological trends of the structure electrical behavior. 5 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
2d , « 2.5d » , and 3d electrostatics are necessary to get accurate figures about the device erformance performance. They require numerical simulation ftwares such as softwares such as « Centaurus » or similar. 6 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 6
TEP 1) (STEP 1) Introduction to Electrostatic Modelling n a on a Simple Fundamental Configuration « Work Function » or « xtraction Energy » Extraction Energy from a Solid 7 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
« Work Function » or « Extraction Energy » rom a Solid from a Solid W electron W is the amount of energy we have to provide to extract one electron from a solid and bring it to the « Vacuum Level E ». M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 8
Vacuum Level for Electrons E V 9 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
acuum Level for Electrons Vacuum Level for Electrons E V The Vacuum Level for Electrons E V the energy of one electron alone is the energy of one electron alone and motionless in perfect vaccuum. 10 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 10
Vacuum Level as the Energy of a Motionless Electron Vacuum Energy E in Vacuum En rgy E 11 Momentum p Vacuum Level E V Non relativistic Dispersion Relation for Electrons M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Vacuum Level as the Energy of a Motionless Electron Vacuum in Vacuum Energy E «Vacuum Level » E V En rgy E m 0 .c 2 511 keV m 0 c 2 0 Momentum p Relativistic Dispersion Relation for Electrons in Vaccum p 12 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 12
lectrons in a Crystal Electrons in a Crystal 13 M2_NSE_UCBL Semiconductor Structures and Devices January 2010
Background image of page 13

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Work Function for a Metal Vaccuum Level E V Energy Work Function ( W ) etal Metal Fermi Level E (p) (p) (p) (p) ( E F ) ) (s) (s) (s) (s) uclei, core electrons, molecular orbital electron±«c louds » (z) 14 M2_NSE_UCBL Semiconductor Structures and Devices January 2010 Nu , n , m u n u
Background image of page 14
Image of page 15
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 03/07/2010 for the course NANOSCALE ue88 taught by Professor Jayw during the Spring '10 term at Université Rennes I.

Page1 / 247

628048_6228 - SEMICONDUCTOR STRUCTURES and DEVICES 1...

This preview shows document pages 1 - 15. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online