Lecture-05 - 1 EEE 525: VLSI Design, L-05 EEE 525: VLSI...

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Unformatted text preview: 1 EEE 525: VLSI Design, L-05 EEE 525: VLSI Design, L-05 Leakage Current Leakage Current Spring 2010, ASU Yu (Kevin) Cao, yu.cao@asu.edu , GWC 336 Highlight Highlight Overview Sub-threshold drain leakage Others leakage currents Others leakage currents – Gate tunneling – Gate-Induce-Drain-Leakage (GIDL) – Junction leakage and Punchthrough Reading: Chapter 2 EEE525, ASU, Y. Cao Lecture 05- 2 - 2 Highlight Highlight Overview Sub-threshold drain leakage Others leakage currents Others leakage currents – Gate tunneling – Gate-Induce-Drain-Leakage (GIDL) – Junction leakage and Punchthrough Reading: Chapter 2 EEE525, ASU, Y. Cao Lecture 05- 3 - Leakage in Contemporary Design Leakage in Contemporary Design Leakage: a grand challenge for power reduction – It exacerbates (exponentially) with scaling EEE525, ASU, Y. Cao Lecture 05- 4 - 3 Constraint on Scaling Constraint on Scaling Benefit of scaling: – To increase the packing density larger systems and lower cost – To increase I d and reduce capacitance higher speed and lower power Constraints: – Technology, e.g. lithography – Leakage current V th choice Doping profile DIBL control Gate dielectrics – Reliability Oxide breakdown Hot carrier and NBTI ESD Electromigration EEE525, ASU, Y. Cao Lecture 05- 5 - Leakage Components Leakage Components 1.1....
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Lecture-05 - 1 EEE 525: VLSI Design, L-05 EEE 525: VLSI...

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