Midterm-sample - NAME SID EEE 525 ASU Midterm Sample...

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NAME: ; SID #: . EEE 525: Sample Midterm 1 EEE 525, ASU Midterm Sample NAME: , . SID #: . (LAST) (FIRST) Problem 1: (29) . Problem 2: (21) . Total (50) .
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NAME: ; SID #: . EEE 525: Sample Midterm 2 Problem 1: Inverter analysis (29 pts) Consider the fictitious gate in the figure below. M 1 is a normal NMOS. The IV characteristic of the load device L 1 is given in the figure as well. V DD =2.5V, C L = 100fF. a. Determine (W/L) of M 1 such that a V OL of 0.6V is obtained. (4 pts) b. With (W/L) solved in a, determine the values of V OH and V M of the gate. (5 pts) (W/L) = 10.4 V DD L 1 In Out C L M 1 V I + V I 1.25V 1mA The IV characteristic of L 1 0 2.5V V OH = 2.5V V M = 1.71V Vin = 2.5V, Vout = V OL = 0.6V, M1 is in the linear mode. For L, V = 2.5-0.6 = 1.9V, L is in the saturation mode. 3 1 2 1 10 2 6 . 0 6 . 0 6 . 0 5 . 2 L ox M I L W C I And we have I M1 = I L1 to solve (W/L). VOH = VDD = 2.5V To solve VM, first assume VM > 1.25V: L is in the linear region and M1 is in the saturation region.
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