ch21 - ECE3500SemiconductorMaterials andDevices

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     Topic 21 : DC and Transient Analysis of BJT                          Fall 2007 ECE 3500 - Semiconductor Materials  and Devices
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    Learning Objectives In this topic you will learn: How to calculate the terminal currents in  an asymmetric BJT with arbitrary biasing. To describe the excess carrier  distribution in the base region of a BJT  when operated in a switching mode.
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    DC Analysis of P-N-P BJT with Generalized Biasing We now relax two of the assumptions made in the earlier analysis of the BJT.  First , we will consider the currents under conditions where the junctions are arbitrarily biased . Second , we will consider the device to have a  non-uniform cross- sectional area .
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    The Coupled Diode Model To take account of arbitrary biasing,  we will consider the current flow to  comprise a  normal   current component  (I EN ,I CN ) and an  inverted  current  component (I EI , I CI ). 
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    The Coupled Diode Model (cont’d) Note : The directions of I EI  and I CI  are            opposite  to the actual directions of           current flow.
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ch21 - ECE3500SemiconductorMaterials andDevices

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