ch14 - ECE3500SemiconductorMaterials andDevices

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    Topic 14 : DC Analysis of the P-N Junction                     Fall 2007 ECE 3500 - Semiconductor Materials  and Devices
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    Learning Objectives In this topic you will learn: The physical behavior of a p-n junction under  forward and reverse bias. The concepts of minority carrier injection and  extraction. How to calculate the current flowing in a biased  p-n junction. The physical mechanisms that cause the  reverse bias breakdown of a p-n junction.
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    Qualitative Description of Current Flow in a Biased P-N Junction Thermal Equilibrium Potential Barrier is just large enough  to create a balance between drift and diffusion currents => no net current flow.
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    Qualitative Description of Current Flow in a Biased P-N Junction (cont’d)
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    Qualitative Description of Current Flow in a Biased P-N Junction (cont’d) Forward Bias Under forward bias, the  potential  on the p-side of the junction is  raised  relative to the n-side. This  lowers  the  energy barrier   to electron and hole  diffusion resulting in an  increase  in the forward current.   Drift   current remains the  same as at thermal equilibrium.
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    Qualitative Description of Current Flow in a Biased P-N Junction (cont’d)
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    Qualitative Description of Current Flow in a Biased P-N Junction (cont’d) Reverse Bias In reverse bias , the  potential  on the  p-side is  lowered  relative to the n-side. This results in a 
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ch14 - ECE3500SemiconductorMaterials andDevices

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