Ch19 - andDevices Topic19: EffectTransistors(MOSFETs Fall2007 Learning Objectives Howtoca

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    Topic 19 : Metal Oxide Semiconductor Field  Effect Transistors (MOSFETs)                       Fall 2007 ECE 3500 - Semiconductor Materials  and Devices
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    Learning Objectives In this topic you will learn: The difference between enhancement and  depletion mode MOSFETs The physical operation of a MOSFET. How to calculate the threshold voltage of a  MOSFET. How real surfaces affect the threshold  voltage of a MOSFET. How to calculate the current-voltage  characteristics of a MOSFET.
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    Metal-Insulator-Semiconductor FET- Basic Structure n-channel enhancement mode MOSFET
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    Depletion-Mode MOSFET In a  depletion-mode MOSFET , a channel already exists without a gate bias applied. The basic structure and current-voltage characteristics are as shown on the next slide.
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    Depletion-Mode MOSFET (cont’d) n-channel depletion-mode MOSFET n+ n+ n+ n+ n n p-substrate p-substrate D D S S G G I I DS DS V V DS DS V V GS GS = -1V = -1V V V GS GS =-2V =-2V V V GS GS = +1V = +1V V V GS GS = +2V = +2V
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    The Ideal MOS Capacitor The basic structure on which the MOSFET is built is the  MOS capacitor The band diagram for the  ideal  MOS capacitor is shown below:
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    The Ideal MOS Capacitor with an Applied Bias
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This note was uploaded on 03/11/2010 for the course ECE 4350 taught by Professor Singh during the Spring '07 term at Villanova.

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Ch19 - andDevices Topic19: EffectTransistors(MOSFETs Fall2007 Learning Objectives Howtoca

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