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Unformatted text preview: nodes V o1 and V o2 are also exactly at V DD /2. You are also given V tn =|V tp |=0.5V, and V DD =2.5V. Note that you do NOT need any device parameters to solve this problem. MSD630 Spring 2010 V B V DD Page 2 of 2 v i V o2 V o1 6. Spice models. a) Using the HSpice manual, find out how many model parameters are used in the so-called “LEVEL1 Schichman-Hodges” MOSFET model. This model essentially corresponds to the simple MOSFET equations derived in class. b) Take a look at the MSD630 model file msd630_hspice.txt. How many model parameters are used to describe the 0.35µm transistors used in MSD630 (nch630, pch630)? c) Explain the purpose of the parameter “HDIF” used in msd630_hspice.txt. 7. For the circuit below, calculate the small signal transfer function v o (s)/v i (s). Parameters: W 1 =10µm, L 1 =0.35µm, W 2 =10µm, L 2 =10µm, V B =1.5V, V DD =3V, V t =0.6V, C ox =5.3fF/µm 2 , µ=300cm 2 /Vs. V DD v i V B M 1 v o M 2...
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This note was uploaded on 03/19/2010 for the course ENG 630 taught by Professor Ghonima during the Spring '10 term at Cairo University.
- Spring '10