Lecture 9 - ME 601: Manufacturing in Micro- and Nanosystems...

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ME 601: Manufacturing in Micro- and Nanosystems Lecture 9: Electron Beam Lithography Principles and Systems
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What is Electron Beam Lithography? Scanning lithography approach, minimum feature size ~ 10 nm Tightly focused electron beam is rastered over special resists to expose features First developed in 1960s using existing SEM technology, 60 nm features achieved as early as 1970s!
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Comparison with Other Methods What factors limit throughput? EBL was once predicted to replace optical lithography!
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Electron Beam Lithography Fundamentals Electrons exhibit wave particle duality Wavelength defined by: where V is energy of electron in units of electron Volts (eV) Electron energy is orders of magnitude greater than photon energy Fundamental resolution limit not dictated by wavelength. So what is the limit? Light refraction is discretized: index of refraction changes abruptly in different media; electrical potential varies continuously in space, so electron refraction is continuous Light is focused with optics; electrons are focused by varying electric or magnetic field nm V 226 . 1 = λ
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Scanning Electron Microscope “Workhorse” of high resolution tools for materials characterization Scanning electron beam interacts with surface features, response of beam to different elements provides contrast Capable of molecular resolution – atomic resolution possible if limits are really pushed (nominally 1-20 nm lower limit)
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Principal Applications of EBL Mask repair: chemical reactions induced by e- beam, deposition and etching of mask absorber material Rapid prototyping: direct write for research devices Mask making: single, high resolution mask can be used for optical lithography – best way to write sub-diffraction RET features (OPC, PSM, ILT)
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This note was uploaded on 03/23/2010 for the course MATERIAL S 601 taught by Professor Samual during the Spring '10 term at Wisconsin.

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Lecture 9 - ME 601: Manufacturing in Micro- and Nanosystems...

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