Lecture 11 - ME 601: Manufacturing in Micro- and...

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ME 601: Manufacturing in Micro- and Nanosystems Lecture 11: Focused Ion Beam Lithography
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Focused Ion Beam “Technology” Beam of charged particles, similar to e-beam but smaller wavelength, higher energy Commonly used for ion implantation during semiconductor manufacturing Focused beams became possible with development of liquid metal ion sources: allows sputtering (milling) and deposition of material
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FIB vs. E-beam FEI Company www.fei.com
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Liquid Metal Ion Source Main difference from e-beam source: emission comes from liquid phase metal at tip Similarly high electric field, very small tip radius Tip remains wetted by metal common sources: Al, Ga, alloys
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Liquid Metal Ion Source Emission of ions is a dynamic process: complex interplay between liquid metal electrohydrodynamics and electric field Effect of electric field expressed according to current of ion beam needed to achieve stable emission Three requirements: Emission surface must maintain high enough curvature Electric field must be high enough to draw liquid metal to tip and release ions Shape of liquid metal layer should be stable to reduce variation in
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This note was uploaded on 03/23/2010 for the course MATERIAL S 601 taught by Professor Samual during the Spring '10 term at Wisconsin.

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Lecture 11 - ME 601: Manufacturing in Micro- and...

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