Lecture 14 - ME 601: Manufacturing in Micro- and...

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Unformatted text preview: ME 601: Manufacturing in Micro- and Nanosystems Lecture 14: Wet Etching, Bulk Micromachining * Thin Films Implant Diffusion Etch Test/Sort Polish Photo Patterned wafer Pattern Transfer Pattern Transfer • Ion implantation • Diffusion • Planarization (chemical mechanical polishing) • Film deposition (PVD, CVD, evaporative metallization/sputtering, ALD) • Etching (wet chemical, dry chemical/reactive ion etching, DRIE) Methods of Pattern Transfer Methods of Pattern Transfer Basic Etch Process photoresist silicon dioxide silicon underetching Rate: • How quickly material is removed ( μ m/min) • Function of concentration, agitation, temperature, density and porosity of the thin film or substrate Selectivity: • Ratio of substrate etching rate over mask etching rate • High selectivity = mask survives long etch times, substrate can be etched more deeply Anisotropy: • Ratio between etch rates in vertical (depth) and lateral directions • Determines obtainable resolution for pattern transfer Etch Parameters mask substrate r r S = Anisotropic: • Best for making small gaps and vertical sidewalls • Typically more costly Isotropic: • Quick, easy, cheap • Not used for high resolution patterning. Why?...
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This note was uploaded on 03/23/2010 for the course MATERIAL S 601 taught by Professor Samual during the Spring '10 term at University of Wisconsin.

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Lecture 14 - ME 601: Manufacturing in Micro- and...

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