Lecture 15 - ME 601 Manufacturing in Micro and Nanosystems...

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Unformatted text preview: ME 601: Manufacturing in Micro- and Nanosystems Lecture 15: Dry Etching oel Voldman and Marty Schmidt, MIT (Open Courseware) Wet vs. Dry Etching (Chemical vs. Physical) Development of Dry Etching • Wet etching used exclusively until early 1970s: inexpensive, general purpose, relatively easy to implement – biggest problem? • As minimum feature size decreased (better resolution lithography), so did need for pattern transfer capable of better feature definition • Widely used SiN passivation layer difficult to wet etch without damaging photoresist • Answer: accelerated ions from plasma; reactive species in plasma found to accelerate dry etching, do not attack PR Dry Etching oel Voldman and Marty Schmidt, MIT (Open Courseware) Mechanisms of Dry Etching Advantages/Disadvantages of Dry Etching • Excellent selectivity: chemical reactions tailored to attack only substrate material, leaving mask material intact • Highly anisotropic: high rate of etching in depth direction, low lateral etch rate • Resolution: significantly improved vs. wet etching. Why? • Materials handling: safety, environmental impact • Disadvantages? Ion Energy (eV) Reaction <3 Physical adsorption 4-10 Some surface sputtering 10-5000 Sputtering 10K-20 K Implantation Classification of Dry Etching...
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Lecture 15 - ME 601 Manufacturing in Micro and Nanosystems...

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