Lecture 17 - ME 601 Manufacturing in Micro and Nanosystems Lecture 17 UV Cured Nanoimprint Step and Flash Room Temperature Nanoimprint

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ME 601: Manufacturing in Micro- and Nanosystems Lecture 17: UV Cured Nanoimprint, Step and Flash
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Disadvantages of thermal nanoimprint Throughput – why? Temperature and pressure – effect on manufacturability? Pressure required scales with temperature (remember viscosity dependence) Elastic vs. plastic deformation: recovery/relaxation effect Solution: room temperature nanoimprint lithography (RT- NIL), depends on alternative imprinting medium Hydrane (HS2550): T g at 0-10 C, melting point 30 C, offers significant low temperature performance vs. PMMA and PS Trade-off: more pronounced relaxation effect; can imprint with continuously increasing pressure (stepped) – allows 75 nm L/S patterns to be achieved Room Temperature Nanoimprint
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HSQ (previously introduced as e-beam resist) is an inorganic material, can be imprinted at room temperature without relaxation effect Issue: low viscosity limits resist thickness; multilayer processes can be used to achieve higher aspect ratios Room Temperature Nanoimprint with HSQ
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Advantages: High aspect ratios, independent of imprinting process High HSQ etch resistance allows thin layer to be used as imprint layer Generally no need to remove residual HSQ Soft PMMA underlayer reduces wear on stamp No release layer necessary. Why? Benefits? Room Temperature Nanoimprint with HSQ
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This note was uploaded on 03/23/2010 for the course MATERIAL S 601 taught by Professor Samual during the Spring '10 term at Wisconsin.

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Lecture 17 - ME 601 Manufacturing in Micro and Nanosystems Lecture 17 UV Cured Nanoimprint Step and Flash Room Temperature Nanoimprint

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