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Unformatted text preview: samples are illuminated with light which generates qM holeelectron pairs cm3s1 uniformly across the plane at x = 1µm. M n Ohmic Sample A n Sample B M Ohmic Ohmic x (µm) 22 1 2 a) What are the minority carrier diffusion coefficient, D h , and the minority carrier diffusion length, L h , in these samples? b) Sketch the excess minority carrier profiles in the two samples. Assume L h >> 22 µm, inspite of what you may have calculated in Part (a). You need not calculate p'(1 µm). 2 c) i) In Sample A, what fraction of the injected holeelectron pairs recombine at the ohmic contact at x = 0? ii) In Sample B, what fraction of the injected holeelectron pairs recombine at the ohmic contact at x = 0? d) In which sample, A or B, if any, is p'(1 µm), the excess hole concentration at x = 1 µm, larger? Explain your answer. Problem 4  Do Problem 5.2 in the course text. Problem 5 Do Problem 5.9 in the course text....
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This note was uploaded on 03/24/2010 for the course ARCH 456 taught by Professor Arch during the Spring '10 term at MIT.
 Spring '10
 Arch

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