ps01 - 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department...

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1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.012 ELECTRONIC DEVICES AND CIRCUITS Problem Set No. 1 Issued: September 5, 2003 Due: September 12, 2003 Reading Assignments: Lecture 1 (9/4/03) -Chap. 1 (all), Chap. 2 (all) Lecture 2 (9/9/03) -Chap. 3 (all except 3.3.2), App. B Lecture 3 (9/11/03) -Chap. 4 (all) Lecture 4 (9/16/03) -Chap. 5 (all) Lecture 5 (9/18/03) -Chap. 6 (all) Lecture 6 (9/23/03) -Chap. 7 (7.1,7.2) Problem 1 - This problem concerns the following five samples of silicon, each of which has a different doping level: (a) 10 17 cm -3 antimony (b) 10 16 cm -3 boron, 5 x 10 15 cm -3 phosphorous (c) no dopants (d) 5 x 10 16 cm -3 antimony, 10 15 cm -3 boron (e) 5 x 10 15 cm -3 arsenic, 10 16 cm -3 antimony (be careful of this one) For each of these samples determine (i) the conductivity type, n- or p-type or intrinsic, and the net doping level, (ii) n o and p o , the thermal equilibrium carrier concentrations at room temperature, and
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ps01 - 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department...

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