HW_01 - EE/CE 3311 Electronic Circuits Homework # 1...

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Homework # 1 Assigned on 01/22/2010 Due on 02/01/2010 Problem #1 The intrinsic carrier concentration of germanium (GE) is expressed as where E g = 0.66 eV. (a) Calculate n i at 300K and 600K and compare the results with those obtained for Si (as presented in class). (b) Determine the electron and hole concentrations if Ge is doped with P at a density of 5 x 10 16 cm -3 . Problem #2 A n -type piece of silicon with a length of 0.1 μ m and a cross section area of 0.05 m x 0.05 m sustains a voltage difference of 1 V. (a) If the doping level is 10 17 cm -3 , calculate the total current flowing through the device at T = 300 K. (b) Repeat (a) for T = 400 K assuming for simplicity that mobility does not change with temperature. (This is not a good assumption.) Problem #3 From the data in Problem #1, repeat Problem #2 for Ge. Assume n = 3900 cm 2 /(V.s) and p = kT cm 3
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This note was uploaded on 03/26/2010 for the course ECE 3030 at Cornell University (Engineering School).

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HW_01 - EE/CE 3311 Electronic Circuits Homework # 1...

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