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# HW_01 - EE/CE 3311 Electronic Circuits Homework 1 Assigned...

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EE/CE 3311 Electronic Circuits Homework # 1 Assigned on 01/22/2010 Due on 02/01/2010 Problem #1 The intrinsic carrier concentration of germanium (GE) is expressed as where E g = 0.66 eV. (a) Calculate n i at 300K and 600K and compare the results with those obtained for Si (as presented in class). (b) Determine the electron and hole concentrations if Ge is doped with P at a density of 5 x 10 16 cm -3 . Problem #2 A n -type piece of silicon with a length of 0.1 μ m and a cross section area of 0.05 μ m x 0.05 μ m sustains a voltage difference of 1 V. (a) If the doping level is 10 17 cm -3 , calculate the total current flowing through the device at T = 300 K. (b) Repeat (a) for T = 400 K assuming for simplicity that mobility does not change with temperature. (This is not a good assumption.) Problem #3 From the data in Problem #1, repeat Problem #2 for Ge. Assume μ n = 3900 cm 2 /(V.s) and μ p = 1900 cm 2 /(V.s). n i = 1 . 66 × 10 15 T 3 / 2 exp E g 2 kT cm 3

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Problem #4 Due to a manufacturing error, the p -side of a pn junction has not been doped. If N D = 3 x 10 16 cm -3 , calculate the built-in potential at T = 300 K.
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