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Ch4 - 4.1 Calculate the intrinsic carrier concentration ni...

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4.1 Calculate the intrinsic carrier concentration, n i , at T = 200, 400, and 600 K for (a) silicon, (b) germanium, and (c) gallium arsenide. 4.10 Given the effective masses of electrons and holes in silicon, germanium, and gallium arsenide, calculate the position of the intrinsic Fermi energy level with respect to the center of the bandgap for each semiconductor at T = 300 K. 4.13 Plot the intrinsic Fermi energy E Fi with respect to the center of the bandgap in silicon for 200 T 600 K. 4.21 The value of p 0 in silicon at T = 300 K is 10 15 cm -3 . Determine (a) E c – E F and (b) n 0 . 4.33 Assume that silicon, germanium, and gallium arsenide each have dopant concentrations of N d = 1 x 10 13 cm -3 and N a = 2.5 x 10 13 cm -3 at T = 300 K. For each of the three materials (a) Is this material n type or p type? (b) Calculate n 0 and p 0 . 4.48 For a particular semiconductor, E g = 1.5 eV, m* p = 10m* n , T = 300 K, and n i = 1 x 10 5 cm -3 . (a) Determine the position of the intrinsic Fermi energy level with respect to the center of the bandgap. (b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below the center of the
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