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# Ch5 - 5.2 A silicon crystal having a cross-sectional area...

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5.2 A silicon crystal having a cross-sectional area of 0.001 cm 2 and a length of 10 -3 cm is connected at its ends to a 10- V battery. At T = 300 K, we want a current of 100 mA in the silicon. Calculate: (a) the required resistance R, (b) the required conductivity, (c) the density of donor atoms to be added to achieve this conductivity, and (d) the concentration of acceptor atoms to be added to form a compensated p- type material with the conductivity given from part (b) if the initial concentration of donor atoms is N d = 10 15 cm -3 . 5.7 A perfectly compensated semiconductor is one in which the donor and acceptor impurity concentrations are exactly equal. Assuming complete ionization, determine the conductivity of silicon at T = 300 K in which the impurity concentrations are (a) N a = N d = 10 14 cm -3 and (b) N a = N d = 10 18 cm -3 . 5.14 Consider a semiconductor that is uniformly doped with N d = 10 14 cm -3 and N a = 0, with an applied electric field of E = 100 V/cm. Assume that µ n = 1000 cm 2 / V-s and µ p = 0. Also assume the following parameters: N c = 2 × 10 19 (T/300)
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