Ch6 - 6.10 Assume that an n-type semiconductor is uniformly...

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6.10 Assume that an n-type semiconductor is uniformly illuminated, producing a uniform excess generation rate g’. Show that in steady state the change in the semiconductor conductivity is given by ∆σ = e( µ n + p ) τ p0 g’ 6.13 A silicon sample at T= 300 K is n type with N d = 5 × 10 16 cm -3 and N a = 0. The sample has a length of 0.1 cm and a cross-sectional area of 10 -4 cm 2 . A voltage of 5 V is applied between the ends of the sample. For t < 0, the sample has been illuminated with light, producing an excess-carrier generation rate of g = 5 x 10 21 cm -3 s -1 uniformly throughout the entire silicon. The minority carrier lifetime is p0 = 3 × 10 –7 s. At t = 0, the light is turned off. Derive the expression for the current in the sample as a function of time t 0. (Neglect surface effects.) 6.18 Consider a bar of p-type silicon material that is homogeneously doped to a value of 3 × 10 15 cm -3 at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure 6.19.
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Ch6 - 6.10 Assume that an n-type semiconductor is uniformly...

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