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# Ch7 - shown in Figure 7.18 Calculate(a V bi(b x n and x p...

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7.5 An abrupt silicon pn junction at zero bias has dopant concentrations of N a = 10 17 cm -3 and N d = 5 × 10 15 cm -3 . T = 300 K. (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level. (b) Sketch the equilibrium energy-band diagram for the junction and determine V bi from the diagram and the results of part (a). (c) Calculate V bi using Equation (7.10), and compare the results to part (b). (d) Determine x n , x p , and the peak electric field for this junction. 7.24 An abrupt silicon pn junction at T = 300 K is uniformly doped with N a = 10 18 cm -3 and N d = 10 15 cm -3 . The pn junction area is 6 × 10 -4 cm 2 . An inductance of 2.2 millihenry is placed in parallel with the pn junction. Calculate the resonant frequency of the circuit for reverse-bias voltages of (a) V R = 1 V and (b) V R = 10 V.

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7.27 A silicon pn junction at T = 300 K has the doping profile
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Unformatted text preview: shown in Figure 7.18. Calculate (a) V bi , (b) x n and x p at zero bias, and (c) the applied bias required so that x n = 30 µ m. 7.28 Consider a silicon pn junction with the doping profile shown in Figure 7.19. T = 300 K. (a) Calculate the applied reverse-bias voltage required so that the space charge region extends entirely through the p region. (b) Determine the space charge width into the n +-region with the reverse-bias voltage calculated in part (a). (c) Calculate the peak electric field for this applied voltage. 7.34 Consider a linearly graded junction. (a) Starting with Equation (7.49), derive the expression for the electric field given in Equation (7.51). (b) Derive the expression for the potential through the space charge region given by Equation (7.53)....
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