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Unformatted text preview: shown in Figure 7.18. Calculate (a) V bi , (b) x n and x p at zero bias, and (c) the applied bias required so that x n = 30 µ m. 7.28 Consider a silicon pn junction with the doping profile shown in Figure 7.19. T = 300 K. (a) Calculate the applied reversebias voltage required so that the space charge region extends entirely through the p region. (b) Determine the space charge width into the n +region with the reversebias voltage calculated in part (a). (c) Calculate the peak electric field for this applied voltage. 7.34 Consider a linearly graded junction. (a) Starting with Equation (7.49), derive the expression for the electric field given in Equation (7.51). (b) Derive the expression for the potential through the space charge region given by Equation (7.53)....
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 Spring '08
 KAVIANI
 Pn junction, pn junction, silicon pn junction, abrupt silicon pn

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