{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

Ch7 - shown in Figure 7.18 Calculate(a V bi(b x n and x p...

Info icon This preview shows pages 1–10. Sign up to view the full content.

View Full Document Right Arrow Icon
Image of page 1

Info icon This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 2
Image of page 3

Info icon This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 4
Image of page 5

Info icon This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 6
Image of page 7

Info icon This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 8
7.5 An abrupt silicon pn junction at zero bias has dopant concentrations of N a = 10 17 cm -3 and N d = 5 × 10 15 cm -3 . T = 300 K. (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level. (b) Sketch the equilibrium energy-band diagram for the junction and determine V bi from the diagram and the results of part (a). (c) Calculate V bi using Equation (7.10), and compare the results to part (b). (d) Determine x n , x p , and the peak electric field for this junction. 7.24 An abrupt silicon pn junction at T = 300 K is uniformly doped with N a = 10 18 cm -3 and N d = 10 15 cm -3 . The pn junction area is 6 × 10 -4 cm 2 . An inductance of 2.2 millihenry is placed in parallel with the pn junction. Calculate the resonant frequency of the circuit for reverse-bias voltages of (a) V R = 1 V and (b) V R = 10 V.
Image of page 9

Info icon This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
7.27 A silicon pn junction at T = 300 K has the doping profile
Image of page 10
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: shown in Figure 7.18. Calculate (a) V bi , (b) x n and x p at zero bias, and (c) the applied bias required so that x n = 30 µ m. 7.28 Consider a silicon pn junction with the doping profile shown in Figure 7.19. T = 300 K. (a) Calculate the applied reverse-bias voltage required so that the space charge region extends entirely through the p region. (b) Determine the space charge width into the n +-region with the reverse-bias voltage calculated in part (a). (c) Calculate the peak electric field for this applied voltage. 7.34 Consider a linearly graded junction. (a) Starting with Equation (7.49), derive the expression for the electric field given in Equation (7.51). (b) Derive the expression for the potential through the space charge region given by Equation (7.53)....
View Full Document

{[ snackBarMessage ]}

What students are saying

  • Left Quote Icon

    As a current student on this bumpy collegiate pathway, I stumbled upon Course Hero, where I can find study resources for nearly all my courses, get online help from tutors 24/7, and even share my old projects, papers, and lecture notes with other students.

    Student Picture

    Kiran Temple University Fox School of Business ‘17, Course Hero Intern

  • Left Quote Icon

    I cannot even describe how much Course Hero helped me this summer. It’s truly become something I can always rely on and help me. In the end, I was not only able to survive summer classes, but I was able to thrive thanks to Course Hero.

    Student Picture

    Dana University of Pennsylvania ‘17, Course Hero Intern

  • Left Quote Icon

    The ability to access any university’s resources through Course Hero proved invaluable in my case. I was behind on Tulane coursework and actually used UCLA’s materials to help me move forward and get everything together on time.

    Student Picture

    Jill Tulane University ‘16, Course Hero Intern