Ch8 - 8.8 A silicon pn junction with a cross-sectional area...

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A silicon pn junction with a cross-sectional area of 10 -4 cm 2 has the following properties at T = 300 K: n region p region N d = 10 17 cm -3 N a = 5 x 10 15 cm -3 τ p0 = 10 -7 s τ n0 = 10 -6 s µ n = 850 cm 2 /V-s µ n = 1250 cm 2 /V-s µ p = 320 cm 2 /V-s µ p = 420 cm 2 /V-s (a) Sketch the thermal equilibrium energy-band diagram of the pn junction, including the values of the Fermi level with respect to the intrinsic level on each side of the junction. (b) Calculate the reverse saturation current I s and determine the forward-bias current I at a forward-bias voltage of 0.5 V. (c) Determine the ratio of hole current to total current at the space charge edge x n . 8.11 A silicon step junction has uniform impurity doping concentrations of N a = 5 × 10 15 cm -3 and N d = 1 × 10 15 cm -3 , and a cross-sectional area of A = 10 -4 cm 2 . Let τ n0 = 0.4 µ s and τ p0 = 0.1 µ s. Consider the geometry in Figure 8.33. Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at
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This note was uploaded on 04/09/2010 for the course EE 537 taught by Professor Kaviani during the Spring '08 term at USC.

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Ch8 - 8.8 A silicon pn junction with a cross-sectional area...

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