16 - 1 Lu ECE331_Wi06 • Example 1 For a silicon sample at...

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Unformatted text preview: 1 Lu ECE331_Wi06 • Example 1 For a silicon sample at 300 K determine the position of the intrinsic Fermi level. Also, determine the position of the Fermi level when the same sample is doped with acceptors at a density of 10 14 cm-3 . eV 238 . 10 10 ln 10 6 . 1 300 10 38 . 1 : 14 . 6 . 553 . 18 . 1 81 . ln 300 10 38 . 1 4 3 2 12 . 1 : 11 . 6 . 10 14 19 23 23 = ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ × × × × = − = ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ × × × + = − − − F i i E E Eq From eV E Eq From E v E c E i E F 1.12 0.553 0.315 0 eV Lu ECE331_Wi06 Example 2 T= 300 K, Si, n i = 1.5×10 10 cm-3 , Nd=3×10 15 cm-3 , Na = 10 16 cm-3 . (1) Is this an n-type or p-type semiconductor? (2) Find n , p , E f . (3) Draw the simplified band diagram. (1) Since Na>Nd ⇒ This is a ??? (2) & (3) eV n p kT E E p n p N N p n N N p n N N i f i i d a a d i d a 338 . 10 5 . 1 10 7 ln 0259 . ) ln( cm 10 21 . 3 10 7 10 5 . 1 cm 10 7 cm 10 7 10 15 3 4 15 20 2 2 3 15 3 15 = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ × × × = = − ×...
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This note was uploaded on 04/09/2010 for the course ECE 331 taught by Professor Rajan during the Spring '09 term at Ohio State.

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16 - 1 Lu ECE331_Wi06 • Example 1 For a silicon sample at...

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