Unformatted text preview: of GaAs. VI. Plot the Fermi-Dirac distribution from 0 to 2 eV if the Fermi level is at 1eV for two cases of room temperature and 0 K. VII. If Fermi level is 3kT below the conduction band edge, find out the error involved when we replace the Fermi-Dirac distribution by the corresponding Boltzmann distribution. VIII. Find out the intrinsic concentration of silicon at 77 K. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan [email protected] Phone (310)-825-1123 Spring 2008...
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- Spring '07
- Electrical Engineering, ........., Fundamental physics concepts, Condensed matter physics, Fermi level, silicon crystal