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Unformatted text preview: of GaAs. VI. Plot the Fermi-Dirac distribution from 0 to 2 eV if the Fermi level is at 1eV for two cases of room temperature and 0 K. VII. If Fermi level is 3kT below the conduction band edge, find out the error involved when we replace the Fermi-Dirac distribution by the corresponding Boltzmann distribution. VIII. Find out the intrinsic concentration of silicon at 77 K. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan firstname.lastname@example.org Phone (310)-825-1123 Spring 2008...
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This note was uploaded on 04/13/2010 for the course EE 2 taught by Professor Vis during the Spring '07 term at UCLA.
- Spring '07
- Electrical Engineering