20082ee2_1_homework%203_08

20082ee2_1_homework%203_08 - of GaAs VI Plot the...

This preview shows page 1. Sign up to view the full content.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE2 Physics for Electrical Engineers Homework #3 I. Explain why phosphorus in silicon crystal in a donor. II. Explain why aluminum in silicon crystal is an acceptor. III. If a silicon crystal is doped with 3 15 10 cm phosphorus atoms, find out the electron concentrations and hole concentrations in the silicon at room temperature. Find out the Fermi level. IV. If a silicon crystal is doped with 3 15 10 cm phosphorus atoms, find out the electron concentrations and hole concentrations in the silicon at zero degree Kelvin. Expain your answer and find out the Fermi level. V. The GaAs crystal is a direct semiconductor which has a effective mass of 0.067 of free electron mass. Find out the effective density of states for the conduction band
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: of GaAs. VI. Plot the Fermi-Dirac distribution from 0 to 2 eV if the Fermi level is at 1eV for two cases of room temperature and 0 K. VII. If Fermi level is 3kT below the conduction band edge, find out the error involved when we replace the Fermi-Dirac distribution by the corresponding Boltzmann distribution. VIII. Find out the intrinsic concentration of silicon at 77 K. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan [email protected] Phone (310)-825-1123 Spring 2008...
View Full Document

{[ snackBarMessage ]}

Ask a homework question - tutors are online