Unformatted text preview: VI. Find out the thermal velocity of electrons in GaAs at room temperature i. e. the velocity of electrons with an energy of kT 2 3 . Compare it with the final ballistic velocity in Problem V and explain the significance of the comparison. VII. A silicon sample is doped with 3 16 10 − cm borons, estimate the conductivity of this sample at room temperature if we can neglect impurity scattering. (It is still a good approximation in this case) VIII. Estimate the mean free time and mean free path of the holes in Problem VII. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan [email protected] Phone (310)-825-1123 Spring 2008...
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This note was uploaded on 04/13/2010 for the course EE 2 taught by Professor Vis during the Spring '07 term at UCLA.
- Spring '07
- Electrical Engineering