20082ee2_1_homework%205_08 - the sample. VI. If the...

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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE2 Physics for Electrical Engineers Homework #5 I. Use the data for modeling silicon crystal in Appendix 6 to estimate the lattice scattering time for electrons in n-type silicon at room temperature. II. When the n-type silicon is doped to 3 17 10 cm , the impurity scattering at room temperature has a relaxation time of about 0.5 picoseconds. Estimate the mobility and conductivity of this silicon sample. III. Estimate the electron diffusion constant of the silicon sample in Problem II. IV. The impurity scattering for holes in silicon is about the same as the electrons. Estimate the mobility and diffusion constant for holes in the n-type sample in Problem II. V. Suppose the silicon sample in Problem II has a minority carrier life time of 10 nanoseconds. Estimate the diffusion length of the holes injected at the surface of
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Unformatted text preview: the sample. VI. If the injected holes in Problem V has a surface concentration of 3 15 10 cm , estimate the hole diffusion current density at the surface. VII. Estimate the hole diffusion current density at m 1 away from the surface of the silicon sample in Problem VI. Compare your answer with that of Problem VI and explain your comparison. VIII. What is the electron diffusion current at the surface in problem VI? What is the total electron current density at the surface? --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan pan@ee.ucla.edu Phone (310)-825-1123 Spring 2008...
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This note was uploaded on 04/13/2010 for the course EE 2 taught by Professor Vis during the Spring '07 term at UCLA.

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