20082ee2_1_homework%206_08 - the p-n junction at...

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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE2 Physics for Electrical Engineers Homework #6 I. The same n-type silicon doped to 3 17 10 cm in Homework #5 is considered in this Homework #6. Estimate the dielectric relaxation time of this silicon sample. II. For problem VII of Homework #5, estimate the “force per unit carrier” for holes due to the consideration of pressure gradient of the diffusion process. Estimate then the “effective electric field” for hole diffusion at m µ 1 away from the surface. III. For problem VII of Homework #5, estimate the real electric field at m 1 away from the surface if the boundary condition requires that the total electron current density is zero. Do it again if the boundary condition requires the total current density to be zero. IV. If an abrupt p-n junction is made of the silicon sample in problem I with a p-type doping also 3 17 10 cm , calculate the build in potential and depletion thickness of
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Unformatted text preview: the p-n junction at equilibrium. V. Plot the electric field and potential profile of the p-n junction in problem IV. Then plot the energy band diagram. VI. If the p-n junction in problem IV is forward biased with 0.7 V, calculated the depletion thickness of the junction and plot the energy band diagram. VII. Estimate the excess hole concentration at the depletion edge of the n-type side of the p-n junction in problem VI. Calculate and plot the excess hole concentration profile. VIII. Calculate the total current density of the diode in problem VI if the minority carrier life time in the p-type region is 5 nanoseconds. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan [email protected] Phone (310)-825-1123 Spring 2008...
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