Unformatted text preview: the p-n junction at equilibrium. V. Plot the electric field and potential profile of the p-n junction in problem IV. Then plot the energy band diagram. VI. If the p-n junction in problem IV is forward biased with 0.7 V, calculated the depletion thickness of the junction and plot the energy band diagram. VII. Estimate the excess hole concentration at the depletion edge of the n-type side of the p-n junction in problem VI. Calculate and plot the excess hole concentration profile. VIII. Calculate the total current density of the diode in problem VI if the minority carrier life time in the p-type region is 5 nanoseconds. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan [email protected] Phone (310)-825-1123 Spring 2008...
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This note was uploaded on 04/13/2010 for the course EE 2 taught by Professor Vis during the Spring '07 term at UCLA.
- Spring '07
- Electrical Engineering