20082ee2_1_homework%207_08

20082ee2_1_homework%207_08 - your calculations. V. Estimate...

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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE2 Physics for Electrical Engineers Homework #7 I. The same p-n junction in Homework #6 is considered in this Homework #7. Calculate the electron and hole concentrations in the so called depletion region of the p-n junction at equilibrium and plot them across the depletion region using logarithmic scale for concentration. II. Use the electron concentration in problem I to calculate the diffusion current density and drift current density in the depletion region and plot them across the depletion region. III. Use the condition in problem II to prove Einstein relation between mobility and diffusion coefficient. IV. Estimate and plot the electron and hole concentration across the depletion region when the p-n junction is forward biased to 0.7 V. Explain the assumptions used in
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Unformatted text preview: your calculations. V. Estimate the diffusion current density and hole current density in problem III and plot them across the depletion region. What is the estimated net current density? Explain your answer. VI. Estimate the mean free path of the injected holes in the n region and compare it with the diffusion length of the injected holes. Comment on your comparison. VII. Estimated the average wavelength of the in injected holes and compare it with the mean free path. Comment on your comparison. VIII. Explain the meaning of the wavelength of an electron in silicon crystal. --END-- Electrical Engineering Department The Henry Samueli School of Engineering and Applied Science University of California, Los Angeles Dee-Son Pan pan@ee.ucla.edu Phone (310)-825-1123 Spring 2008...
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