# lab4 - University of California San Diego Department of...

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University of California, San Diego Department of Electrical and Computer Engineering ECE65, Fall 2009 Lab 4: BJT as a Switch Experiment 1: PSpice simulation of BJT i - v Characteristics i B - + V CC R C Simulation: Simulate the circuit with a 2N3904 BJT and R C = 400 Ω. Do a “parametric sweep” of the DC voltage source V CC with V CC ranging from 0 to 30 V (use 0.1 V intervals). Do a “secondary parametric sweep” on the current source with values of i B = 0 , 50 , 100 , 150 , 200 , and 250 μ A. Plot i C vs v CE ( v CE being the X axis). Set the X axis to show only values from 0 to 10 V (by default it will show up to 30 V). Label each curve with its i B value. Print out a copy for use in your Experiment. You may want to keep an electronic copy of this plot for use in later labs. Experiment 2: BJT Switch Consider the circuit below with a 2N3904 Si BJT transistor, a 351-3230-RC LED, R C = 270 Ω and R B = 20 kΩ. For this diode, V γ = 1 . 7 V. Asuume BJT β = 200 for calculations.

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