# Test2 - S Test2(100 points EEE 3396 Spring 2010 Name...

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Unformatted text preview: S Test2 (100 points) EEE 3396 Spring 2010 Name ............................... .. PIN (any 4 digits) ......... .. Closed book, two pages with notes. Show work for credit and box-in your answer. Note c= 3X108m/s, h=6.63x10'34 J-s, mo=9.l 1x10'31 kg, q=1.6x10'19 C, niSi(3OOK)=1.5x1010/cm3, EGSi=1.1 leV, eo=8.85x10'14 F/cm, 3,51: 11.8, k=1.38x10'23 J/K, 8,3102 =3.9, T=300K, 1 eV=1.6X10'19 J, 1 Angstrom :1010 m. 25 pts. 1. Assume that the breakdown ﬁeld for ﬁeld ionization is 106 V/cm in silicon. Calculate the resulting Zener voltage for a pn diode doped with NA=ND=5xlOl7/cm3 . 30 pts. 2. Consider the following p-n silicon diode: Properties of the n-region: doping = 1016/cm3, un=900cm2/Vs, up=1000m2/V s, In=tp=5us. Properties of the p-region: doping = 1015/cm3, un=1200cm2Ns, up=450cm2/Vs, rn=tp =50us. T= 300K. Note that a p-n diode is a minority carrier device! Design the diode such that its leakage current is no more than 1 pA (=10'uA) at a reverse bias voltage of 5V by adjusting the diode area. 45 pts 3a. Calculate the values of the p1-n and the n-p2 contact potentials of a pl-n-pz diode doped with NA1=ND=1016/cm3 and NA2=1018/cm3 at 300K in equilibrium. 3b. Calculate the values in eV of Ei-EF in the p1, n, and p2 region. 30. Plot to scale the energy versus position diagram of this diode in equilibrium with the n and p regions much wider that their respective carrier diffusion lengths. Label EC, Ei, By, and By. jo:\$(%:mpa+ Drama dag/29bit; DEW) Onhszrdxz. (PAM/Lia mung «r3 l p-SL‘COJL a Z “V90 :2 l! _ 30 S—NO‘O) =0, TXZO’b)‘ Q 25'“ lOS/CMS W“ WA 10“7 Lelvu. In P" 34> “23x23 0M2/ L—W DP: My": WALL ~ 2.54 s 3; [.6xloﬁ‘7 3 LP: 0W9 i z: ‘1 2.371% Skim _— 3 (5’0 0V“ Z We: B”,_ 31527: i W10“5 5 2 23200“ Vw‘o le we V323.” ? Dip“ "‘ “61 LO A/GM'Z‘C - ~H 33 :2 1.6xlo"3£l,7c?x{[email protected]+ Lenny]: 3.!!X/O #514": m6 Z 3; /‘ F2? I Vow—W ; Lo: & {V104ng :Lgowo [email protected]% logwcj ...
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