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Test2 (100 points) EEE 3396 Spring 2010
Name ............................... .. PIN (any 4 digits) ......... .. Closed book, two pages with notes. Show work for credit and boxin your answer. Note c= 3X108m/s, h=6.63x10'34 Js, mo=9.l 1x10'31 kg, q=1.6x10'19 C,
niSi(3OOK)=1.5x1010/cm3, EGSi=1.1 leV, eo=8.85x10'14 F/cm, 3,51: 11.8, k=1.38x10'23 J/K,
8,3102 =3.9, T=300K, 1 eV=1.6X10'19 J, 1 Angstrom :1010 m. 25 pts.
1. Assume that the breakdown ﬁeld for ﬁeld ionization is 106 V/cm in silicon. Calculate
the resulting Zener voltage for a pn diode doped with NA=ND=5xlOl7/cm3 . 30 pts.
2. Consider the following pn silicon diode:
Properties of the nregion: doping = 1016/cm3, un=900cm2/Vs, up=1000m2/V s, In=tp=5us.
Properties of the pregion: doping = 1015/cm3, un=1200cm2Ns, up=450cm2/Vs, rn=tp =50us.
T= 300K. Note that a pn diode is a minority carrier device!
Design the diode such that its leakage current is no more than 1 pA (=10'uA) at a reverse bias
voltage of 5V by adjusting the diode area. 45 pts
3a. Calculate the values of the p1n and the np2 contact potentials of a plnpz diode
doped with NA1=ND=1016/cm3 and NA2=1018/cm3 at 300K in equilibrium.
3b. Calculate the values in eV of EiEF in the p1, n, and p2 region.
30. Plot to scale the energy versus position diagram of this diode in equilibrium with the
n and p regions much wider that their respective carrier diffusion lengths. Label EC, Ei, By, and By. jo:$(%:mpa+ Drama dag/29bit; DEW) Onhszrdxz. (PAM/Lia mung «r3 l pSL‘COJL a Z
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 Spring '08
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 ........., Pn junction, Lo, pn silicon diode

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