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# Test3 - Test 3(100 points EEE 3396 Spring 2010 Name email...

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Unformatted text preview: Test 3 (100 points) EEE 3396 Spring 2010 Name .............................. email ............................ PIN (any 4 digits) ........... Closed book, three pages with notes alloWed. Show work for credit and box—in your answer. Note c= 3x108111/s,h=6.63x10'34 J.s, mo=9.11xlO"31 kg, q=1.6x10'19 C, niSi(300K)=l.5x101°/cm3, so: 8.85x10'14 F/cm, 3.51: 11.8, k=1.38x10‘23J/K, 3,5102 =3.9, T=300K, EGSi=1.11eV, 1 eV=1.6x10‘19 J, 1 Angstrom =10"8 cm, lnm=10'7cm. 30 pts. 1. Consider a MOS Capacitor fabrication process using a bulk silicon doping of NA=1017/cm3, oxide thickness of 100 Angstroem , and an Al gate with a workfunction of 4.08 eV. The electron afﬁnity of silicon is 4.05 eV and Qi=5x10ll q C/cm2 in the oxide. T=3 00K. 1a. Calculate VFB. lb. Draw for VG=VFB the energy band diagram of the MOS Capacitor to scale. Include the M, Si02 and semiconductor layer and indicate biasing, q¢s, q<|>F, and Ec, By, E, and E1: in all these layers as a function of position. 30 pts. 2. For the MOS capacitor speciﬁed in problem 1 above, 2a. Calculate VT. 2b. Draw for VG=VT the energy band diagram of the MOS Capacitor to scale. Include the M, SiOz and semiconductor layer and indicate biasing, q¢s, q¢F, and EC, Ev, E1, and E1: in all these layers as a function of position. 40 pts 3. Assume that the VT=1V of a n-channel MOSF ET and VT= -IV of a p—channel MOSFET having the same geometry and doping concentrations and d5102=200 Angstroem, un=3000m2/Vs, up=100cm2Ns, L=0.l um, and Z=1 urn . 3a. Calculate the current in each FET when VG=2V and VDS=|2V| 3b. Calculate the current in each FET when VG= -2V and VDS=|2VI PETQMQ § ms Téxé %/ gpﬂvﬁ 20“) C(x CL:&3__ m :cMrX/d’qﬁ Rzi‘uVX/ﬁfy d1” (GM/56’ 6:55?» Tax: (<0ch __ if?) g €39“ My“ I; C JO 1:3/1 ~136X10d§sdoxﬁ:(l 5X60) a Cami/1W. A K '- ‘ J V’FPSZ @ho”? : w—OaCfgi HSX/Ol/Wéﬂdl? Bum/o“? Vngﬂméw b vsjvm ,9 ﬂak ijm {h Hi9 KMWﬂmé (59.0 m. [0?— M W1 2/5 (xi/c; 3 de/Haw? WGSF€T VTgleafcwchmMVg>V¢~ V LAr‘fW/LM mwﬂa‘ Vr : ~/M-=W&WW [/4 < {/T 39 VGzQV ) VDg:QV } M~W MW ' L0 packvaEﬂa-ZZFQEDSQ I h~dk%wop'\ Vpgﬁ, 4/6va 2 24,4“ WDWW‘: H/ 2 02%“ V03; 21/9 ”Fe/ﬁr Kn 50»me 91/0: ﬁE—Z—LQ(V6 yr] 2 as. (@061me :— ~77? 2. a; mm—a 6? ”73/0 /°W \$0: 906% )O’L‘af lg 9/5772 ..— )3: 2.3? 10“ A 2 , 09) x/o’” Q (Meme/Q (/5, (V1— -—>C WWW. \${hce (/1005er maﬁa/AM W dem‘unJ Vb<Vs OR V03 <0 a mgr-2v 8m. x p wH/ ' , VDSIH- ‘V‘H/T Vbﬁ 5b,. wza (my 2 1W7 ~271ij 2]» z xa/X/O'“ ...
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Test3 - Test 3(100 points EEE 3396 Spring 2010 Name email...

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