mftse_Lab1

# mftse_Lab1 - 100CMing Fung Alfred Tse 27C 100C 27C...

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100°C 27°C 100°C 27°C Ming Fung Alfred Tse A93411678 4/11/2010 ECE165 Buckwalter Lab 1 Report Problem 1(a) NMOS I d VS V ds for V gs = 0.6V, 1.2V and 1.8V; V dd = 1.8V

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Problem 1(b) PMOS I d VS V ds for V gs = -0.6V, -1.2V and -1.8V; V dd = -1.8V
Problem 1(c) NMOS Leakage Current VS V ds at 27°C and 100°C I ON /I OFF Calculation: 95.04pA / 13.21pA = 7.195 (for NMOS)

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Problem 1(d) PMOS Leakage Current VS V ds at 27°C and 100°C I ON /I OFF Calculation: 116.1 A / 95.35 A = 1.218 (for PMOS) μ μ Comparing leakage Current of PMOS and NMOS at 100°C: The ratio is: I PMOS /I NMOS = 95.35 A / 13.21pA 7218000 μ The leakage current of PMOS is very large compare to that of NMOS, that NMOS leakage current can even be seen as a negligible value.
Problem 2(a) CMOS VTF (V in VS V out ), PMOS size: width = 1.3 m; length = 0.2 m μ μ

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By doing derivative of the curve, there are two points that slope = -1: (778.5mV, 1.668V) and (1.023V, 99mV) V OHU = 1.668V V OLU = 99mV V IH = 1.023V
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## This note was uploaded on 04/22/2010 for the course ECE ECE 165 taught by Professor Buckwalter during the Spring '09 term at UCSD.

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mftse_Lab1 - 100CMing Fung Alfred Tse 27C 100C 27C...

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