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Unformatted text preview: Use Fermi probability to find out the number of ionized donors at 300 K.) 3. If n o = 10 16 cm-3 , where is the Fermi level relative to E i in Si at 300 K? (10 points) 4. Calculate the displacement of E i from E g /2 for Si at 300 K, assuming the effective mass values for electrons and holes are 1.1m o and 0.56m o , respectively. (10 points) 5. A new semiconductor has N c = 10 19 cm-3 , N v = 5 x 10 18 cm-3 , and E g = 2 eV. If it is doped with 10 17 donors (fully ionized), calculate the electron, hole and intrinsic carrier concentrations at 627 C. Sketch the simplified band diagram, showing the position of E F . (20 points)...
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- Spring '09