HW6 - cm-3 , Nv = 110 19 (T/300) 3/2 cm-3 , Eg = 1.10 eV....

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ECE331 Homework #6 (Due Friday, 5/23/2008) 1. In silicon at T = 300 K, we have experimentally found that n 0 = 4.5×10 4 cm -3 and Nd = 5×10 15 cm -3 . (a) Is the material n type or p-type? (b) Determine the majority and minority carrier concentrations. (c) What types and concentrations of impurity atoms exist in the material? (d) Calculate the conductivity of the material. (20 points) 2. Consider a semiconductor that is uniformly doped with Nd = 10 14 cm -3 and Na = 0, with an applied electric field of E = 100 V/cm. Assume that μ n = 1000 cm 2 /V-s and μ p = 0. Also assume the following parameters: Nc = 2×10 19 (T/300) 3/2
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Unformatted text preview: cm-3 , Nv = 110 19 (T/300) 3/2 cm-3 , Eg = 1.10 eV. (a) Calculate the electric-current density at T = 300 K. (b) At what temperature will this current increase by 5 precent? (Assume the mobilities are independent of temperature.) (20 points) 3. (10 points) Callister 7 th edition, 5.3 4. (10 points) Callister 7 th edition, 5.7 5. (20 points) Callister 7 th edition, 5.D3 6. (10 points) If the carrier diffusion in a semiconductor is steady state diffusion (or it obeys Ficks first law), give equations of electron and hole diffusion current. Explain how you get the equations...
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