Lect_08 - ECE 442 ECE 442 SolidState Devices & Circuits...

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CE 442 ECE 442 Solid State Devices & Circuits 8. MOS Amplifiers Jose E. Schutt-Aine lectrical & Computer Engineering Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442–Jose Schutt Aine 1
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Biasing of MOS Transistors Bias Characteristics – Operation in saturation region – Stable and predictable drain current   2 1 2 Dn o x G S T W IC V V L  ECE 442–Jose Schutt Aine 2
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Two-Supply MOS Bias  2 1 2 Dn o x G S T W I CV V L  rovides DC ground at gate and high input R G provides DC ground at gate and high input resistance to signal source. ECE 442–Jose Schutt Aine 3
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Single-Supply MOS Bias – Choose R 1 and R 2 to fix V G hoose R nd R fix V Choose R S and R 2 to fix V S –V GS determines I D – Choose R D to fix V D ECE 442–Jose Schutt Aine 4
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Bias with Feedback Resistor GS DS DD D D VVV R I  D DG S D D VVR I egative feedback (degeneration) provided by Negative feedback (degeneration) provided by R G ECE 442–Jose Schutt Aine 5
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Common Source MOSFET Amplifier Bias is to keep MOS in saturation region ECE 442–Jose Schutt Aine 6
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Common Source MOSFET Amplifier Small-Signal Equivalent Circuit for MOS (device only) 2 ' 1 G S T W I kV V  hich leads to   2 D n GS L 2 DD I I  ' / k W L I Which leads to GS GSQ m GS eff VV g hereV V V is proportional to W L 2/ mn D gk ECE 442–Jose Schutt Aine 7 GS T eff whereV / m g is proportional to
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MOSFET Output Impedance To calculate r ds , account for
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Lect_08 - ECE 442 ECE 442 SolidState Devices & Circuits...

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